STP45NE06L Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFET POWER MOSFET

STP45NE06L
®
STP45NE06LFP
N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
STP45NE06L
STP45NE06LFP
V_DSS
60 V
60 V
R_DS(on)
< 0.028 Ω
< 0.028 Ω
I_D
45 A
25 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.022 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 ^oC
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique "Single Feature
Size™ " strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP45NE06L STP45NE06LFP
VDS Drain-source Voltage (VGS = 0)
V_DGR
V_GS
I_D
I_D
I_DM(•)
P_tot
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
V_ISO Insulation Withstand Voltage (DC)
dv/dt Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1999
60
V
60
V
± 20
V
45
25
A
31
17.5
A
180
180
A
100
0.67
35
0.23
W
W/^oC

2000
V
7
-65 to 175
175
(1) ISD ≤ 45 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
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