STP45NE06 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFETO POWER MOSFET

STP45NE06
®
STP45NE06FP
N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
STP45NE06
STP45NE06FP
VDSS
60 V
60 V
RDS(on)
< 0.028 Ω
< 0.028 Ω
s TYPICAL RDS(on) = 0.022 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 ^oC
s APPLICATION ORIENTED
CHARACTERIZATION
ID
45 A
25 A
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size™ "
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
PRELIMINARY DATA
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1998
Value
Unit
STP45NE06 STP45NE06FP
60
V
60
V
± 20
V
45
25
A
31
17.5
A
180
180
A
100
0.67
35
0.23
W
W/^oC

2000
V
7
V/ns
-65 to 175
o_C
175
o_C
(1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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