STP45N40DM2AG Datasheet, PDF (1/13 Pages) STMicroelectronics – Extremely low gate charge and input capacitance

STP45N40DM2AG
Automotive N-channel 400 V, 0.058 Ω typ., 38 A MDmesh™
DM2 Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STP45N40DM2AG
VDS
400 V
RDS(on)
max.
0.072 Ω
ID
PTOT
38 A 250 W
 Designed for automotive applications and
AEC-Q101 qualified
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Q_rr)
and time (t_rr) combined with low R_DS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking Package Packing
STP45N40DM2AG 45N40DM2 TO-220
Tube
September 2015
DocID028082 Rev 2
This is information on a product in full production.
1/13
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