STP45N10F7 Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

STD45N10F7, STI45N10F7,
STP45N10F7
N-channel 100 V, 0.0145 Ω typ., 45 A, STripFET™ VII DeepGATE™
Power MOSFETs in DPAK, I²PAK and TO-220 packages
Datasheet - production data
TAB
3
1
DPAK
TAB
TAB
123
I²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
$4!"
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Features
Order codes
STD45N10F7
STI45N10F7
STP45N10F7
V_DS
R_DS(on)
max.⁽¹⁾
100 V 0.018 Ω
1. @ V_GS = 10 V
• Ultra low on-resistance
• 100% avalanche tested
I_D
45 A
P_TOT
60 W
Applications
• Switching applications
Description
These devices utilize the 7^th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R_DS(on) in all
packages.
3
!-V
Order codes
STD45N10F7
STI45N10F7
STP45N10F7
Table 1. Device summary
Marking
Package
45N10F7
DPAK
I²PAK
TO-220
Packaging
Tape and reel
Tube
October 2013
This is information on a product in full production.
DocID024455 Rev 1
1/19
www.st.com