STP40NF12 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 120V - 0.028W - 40A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET

STP40NF12
N-CHANNEL 120V - 0.028Ω - 40A TO-220
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP40NF12
120 V < 0.032 Ω 40 A
s TYPICAL R_DS(on) = 0.028Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
E_AS (2) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(q) Pulse width limited by safe operating area
October 2003
Value
120
120
± 20
40
28
160
150
1
14
150
– 55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
(1) ISD ≤40A, di/dt ≤600A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting T_j = 25°C, I_D = 40A, V_DD = 50V
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