English
Language : 

STP40NF03L Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 30V - 0.020 ohm - 40A TO-220 STripFET POWER MOSFET
®
STP40NF03L
N - CHANNEL 30V - 0.020 Ω - 40A TO-220
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(o n)
STP40NF03L 30 V < 0.022 Ω
s TYPICAL RDS(on) = 0.020 Ω
s LOW THRESHOLD DRIVE
ID
40 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
Va l u e
VDS Drain-source Voltage (VGS = 0)
30
VDGR Drain- gate Voltage (RGS = 20 kΩ)
30
VG S
ID
ID
I DM ( •)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
± 20
40
28
160
70
Derating Factor
0.46
EAS (1) Single Pulse Avalanche Energy
250
Tstg Storage Temperature
-65 to 175
Tj Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area
( 1) starting Tj = 25 oC, ID =20A , VDD = 15V
October 1999
Unit
V
V
V
A
A
A
W
W /o C
m/J
oC
oC
1/8