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| STP3NK50Z Datasheet, PDF (1/14 Pages) STMicroelectronics – Gate charge minimized | |||
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STP3NK50Z
N-channel 500 V, 2.8 ⦠typ., 2.3 A Zener-protected SuperMESHâ¢
Power MOSFET in a TO-220 package
Datasheet - production data
Features
TAB
3
2
1
TO-220
Order code
STP3NK50Z
VDS RDS(on)max. ID
500 V 3.3 Ω 2.3 A
⢠Extremely high dv/dt capability
⢠ESD improved capability
⢠100% avalanche tested
⢠Gate charge minimized
⢠Zener-protected
PTOT
45 W
Figure 1. Internal schematic diagram
D(2, TAB)
G(1)
S(3)
AM01476v1
Applications
⢠Switching applications
Description
This device is an N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH⢠technology,
achieved through optimization of ST's well
established strip-based PowerMESH⢠layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Order code
STP3NK50Z
Table 1. Device summary
Marking
Packages
P3NK50Z
TO-220
Packaging
Tube
August 2013
This is information on a product in full production.
DocID025103 Rev 1
1/14
www.st.com
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