STP3NB90 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 900V - 4 ohm - 3.5 A - TO-220/TO-220FP PowerMESH MOSFET

STP3NB90
®
STP3NB90FP
N - CHANNEL 900V - 4 Ω - 3.5 A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP3NB90
STP3NB90FP
900 V
900 V
< 4.2 Ω
< 4.2 Ω
3.5 A
3.5 A
s TYPICAL RDS(on) = 4 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
TARGET DATA
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP4NB90 STP4NB90FP
V_DS Drain-source Voltage (V_GS = 0)
900
V
VDGR
V_GS
ID
I_D
I_DM
Ptot
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
900
± 30
3.5
3.5(**)
2.2
1.26(*)
14
14
100
35
0.8
0.28
V
V
A
A
A
W
W/^oC
dv/dt(1) Peak Diode Recovery voltage slope
4.5
4.5
V/ns
V_ISO Insulation Withstand Voltage (DC)

2000
V
Tstg Storage Temperature
-65 to 150
o_C
T_j
Max. Operating Junction Temperature
150
o_C
(*) Pulse width limited by safe operating area (1) ISD ≤ 3.5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (**) Limited only TJMAX
October 1998
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