STP3NB60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STP3NB60
STP3NB60FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH™ MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STP3NB60
STP3NB60FP
600 V
600 V
<3.6 Ω
< 3.6 Ω
3.3 A
2.2 A
s TYPICAL RDS(on) = 3.3 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
VDGR
VGS
ID
I_D
I_DM ( •)
Ptot
dv/dt(1)
VISO
Tstg
Tj
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 ^oC
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
March 1998
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
STP3NB60 STP3NB60FP
600
600
± 30
3.3
2.2
2.1
1.4
13.2
13.2
80
35
0.64
0.28
4.5
4.5

2000
-65 to 150
150
Uni t
V
V
V
A
A
A
W
W/^oC
V/ ns
V
o_C
o_C
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