STP3NA90 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STP3NA90
STP3NA90FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
ST P3NA 90
ST P3NA 90FI
VDSS
900 V
900 V
RDS(o n)
< 5.3 Ω
< 5.3 Ω
ID
3A
1.9 A
s TYPICAL RDS(on) = 4.4 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
V_{D GR}
V_GS
ID
ID
IDM(•)
P_tot
Drain-Source Voltage (Vgs = 0)
Drain-Gate Voltage (R_gs = 20 KΩ)
Gate-Source Voltage
Drain-Current (continuous) at Tc = 25^oC
Drain-Current (continuous) at Tc = 100^oC
Drain-Current (Pulsed)
Tot al Dissipation at T_c = 25^oC
Derating Factor
VISO Insulation W ithst and Voltage (DC)
T_stg Storage T emperature
Tj
Max Operating Junction Temperature
(•)Pulse width limited by safe operating area
March 1996
Value
STP3NA90
S TP3NA 90F I
900
900
± 30
3
1. 9
2
1. 2
12
12
100
40
1.25
0 .3 2
-
2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/^oC
V
o_C
o_C
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