STP36NF06 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET

STP36NF06
STP36NF06FP
N-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
STP36NF06
STP36NF06FP
60 V
60 V
<0.040 Ω
<0.040 Ω
s TYPICAL R_DS(on) = 0.032 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
I_D
30 A
18 A(*)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
Ordering Information
SALES TYPE
STP36NF06
STP36NF06FP
MARKING
STP36NF06
STP36NF06FP
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(*) Current Limited by Package
October 2003
STP36NF06
30
21
120
70
0.47
Value
STP36NF06FP
60
60
± 20
18(*)
12
72
25
0.17
20
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤36A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting T_j = 25 ^oC, I_D = 18 A, V_DD = 45V
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