STP35NF10 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

STP35NF10
STB35NF10
N-CHANNEL 100V - 0.030Ω - 40A TO-220 / D²PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP35NF10
STB35NF10
100 V < 0.035 Ω
100 V < 0.035 Ω
40 A
40 A
s TYPICAL R_DS(on) = 0.030Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
3
2
1
TO-220
3
1
D²PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
E_AS (2) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(q) Pulse width limited by safe operating area
April 2003
Value
100
100
±20
40
28
160
115
0.77
13
300
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
– 55 to 175
°C
(1) I_SD ≤35A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
(2) Starting T_j = 25°C, I_D = 20A, V_DD = 80V
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