STP33N10 Datasheet, PDF (1/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP33N10
STP33N10FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP33N10
STP33N10FI
VDSS
100 V
100 V
R DS( on)
< 0.06 Ω
< 0.06 Ω
ID
33 A
18 A
s TYPICAL R_DS(on) = 0.045 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175^oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
V_{D S}
V_{DG R}
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
VGS
I_D
I_D
ID M(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at T _c = 25 ^oC
Drain Current (continuous) at T _c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1993
Val ue
STP33N10
ST P3 3N 10 F I
100
100
± 20
33
18
23
12
132
132
150
45
1
0.3

2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/^oC
V
o_C
o_C
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