STP315N10F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – High avalanche ruggedness

STP315N10F7
Automotive-grade N-channel 100 V, 2.3 mΩ typ., 180 A
STripFET™ F7 Power MOSFET in a TO-220 package
Datasheet - production data
Features
Order code
STP315N10F7
VDS
100 V
RDS(on)max
2.7 mΩ
ID
180 A
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
Features
 Designed for automotive applications and
AEC-Q101 qualified
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STP315N10F7
AM01475v1_Tab
Table 1: Device summary
Marking
Package
315N10F7
TO-220
Packaging
Tube
August 2016
DocID025348 Rev 4
This is information on a product in full production.
1/13
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