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| STP310N10F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ VII DeepGATE™ Power MOSFET in a TO-220 package | |||
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STP310N10F7
N-channel 100 V, 2.3 mΩ typ., 180 A STripFET⢠VII DeepGATEâ¢
Power MOSFET in a TO-220 package
Datasheet - production data
Features
TAB
3
2
1
TO-220
Figure 1. Internal schematic diagram
' 7$%
Order code
STP310N10F7
VDS RDS(on) max. ID
100 V 2.7 mΩ 180 A
⢠Ultra low on-resistance
⢠100% avalanche tested
Applications
⢠Switching applications
Description
This device utilizes the 7th generation of design
rules of STâs proprietary STripFET⢠technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
*
6
$0Y
Order codes
STP310N10F7
Table 1. Device summary
Marking
Package
310N10F7
TO-220
Packaging
Tube
July 2013
This is information on a product in full production.
DocID022287 Rev 7
1/13
www.st.com
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