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STP30NM50N Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 500 V, 0.090 Ω, 27 A MDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 | |||
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STB30NM50N,STI30NM50N,STF30NM50N
STP30NM50N, STW30NM50N
N-channel 500 V, 0.090 â¦, 27 A MDmesh⢠II Power MOSFET
D2PAK, I2PAK, TO-220FP, TO-220, TO-247
Features
Type
STB30NM50N
t(s) STI30NM50N
STF30NM50N
uc STP30NM50N
rod STW30NM50N
VDSS
(@Tjmax)
550 V
550 V
550 V
550 V
550 V
RDS(on)
max
< 0.115 â¦
< 0.115 â¦
< 0.115 â¦
< 0.115 â¦
< 0.115 â¦
ID
27 A
27 A
27 A(1)
27 A
27 A
1. Limited only by maximum temperature allowed
te P â 100% avalanche tested
le â Low input capacitance and gate charge
o â Low gate input resistance
Obs Application
) - â Switching applications
ct(s Description
du This series of devices is designed using the
ro second generation of MDmesh⢠Technology.
P This revolutionary Power MOSFET associates a
te new vertical structure to the Companyâs strip
layout to yield one of the worldâs lowest on-
le resistance and gate charge. It is therefore suitable
so for the most demanding high efficiency
Obconverters.
3
1
D²PAK
3
2
1
TO-247
123
I²PAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB30NM50N
STI30NM50N
STF30NM50N
STP30NM50N
STW30NM50N
Marking
30NM50N
30NM50N
30NM50N
30NM50N
30NM50N
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
September 2008
Rev 2
1/18
www.st.com
18
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