STP30NM30N Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh™ II Power MOSFET

STP30NM30N
N-channel 300V - 0.078Ω - 30A - TO-220
Ultra low gate charge MDmesh™ II Power MOSFET
Features
Type
STP30NM30N
V_DSS
300V
R_DS(on)
I_D
<0.090Ω
30A
■ Worldwide lowest gate charge
■ High dv/dt avalanche capabilities
■ Low input capacitance
■ Low gate resistance
Description
This 300V Power MOSFET with a new advanced
layout brings all unique advantages of MDmesh™
technology to medium voltages. The device
exhibits worldwide lowest gate charge for any
given on-resistance. Its use is therefore ideal as
primary side switch for DC-DC converters as well
as for switch mode power supply allowing higher
efficiencies and system miniaturization.
Application
■ Switching application
3
2
1
TO-220
Internal schematic diagram
Order code
Part number
STP30NM30N
Marking
P30NM30N
Package
TO-220
Packaging
Tube
April 2007
Rev 1
1/12
www.st.com
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