STP30NE06L Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET

STP30NE06L
®
STP30NE06LFP
N - CHANNEL 60V - 0.035 Ω - 30A - TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
V_DSS
R_{DS( on )}
STP30NE06L
S TP30N E06LF P
60 V
60 V
< 0.05 Ω
< 0.05 Ω
s TYPICAL RDS(on) = 0.035 Ω
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
I_D
30 A
17 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Pa ram et er
V_DS Drain-source Voltage (V_GS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
V_GS
I_D
I_D
IDM(•)
P_tot
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
V_ISO I nsulation W ithstand Voltage (DC)
T_{s tg} Storage T emperature
T_j
Max. O perating Junct ion T emperature
(•) Pulse width limited by safe operating area
March 1999
Va l u e
STP30NE06L STP30NE06LFP
60
60
± 20
30
17
21
12
120
68
80
30
0.53
0.2

20 00
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/^oC
V
o_C
o_C
1/9