STP30N10F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – High avalanche ruggedness

STP30N10F7
N-channel 100 V, 0.02 Ω typ., 32 A STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STP30N10F7
V_DS
100 V
R_DS(on) max.
0.024 Ω
I_D
32 A
P_TOT
50 W
 Among the lowest R_DS(on) on the market
 Excellent figure of merit (FOM )
 Low C_rss /C_iss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
S(3)
Order code
STP30N10F7
AM01475v1_Tab
Table 1: Device summary
Marking
Package
30N10F7
TO-220
Packing
Tube
February 2016
DocID028799 Rev 1
This is information on a product in full production.
1/13
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