STP2NC60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh™II MOSFET

STP2NC60
STP2NC60FP
N-CHANNEL 600V - 7Ω - 1.9A - TO-220/TO-220FP
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP2NC60
STP2NC60FP
600 V
600 V
<8Ω
<8Ω
1.9 A
1.9 A
s TYPICAL R_DS(on) = 7 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (1)
P_TOT
Drain Current (pulsed)
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
V_ISO
T_stg
T_j
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
.
April 2001
Value
Unit
STP2NC60 STP2NC60FP
600
V
600
V
±30
V
1.9
1.9 (*)
A
1.2
1.2 (*)
A
7.4
7.4 (*)
A
70
30
W
0.56
0.24
W/°C
3.5
V/ns
-
2000
V
–60 to 150
°C
150
°C
(1)ISD ≤1.9A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(*) Limited only by Maximum Temperature Allowed
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