STP2N60 Datasheet, PDF (1/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP2N60
STP2N60FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP2N60
STP2N60FI
VDSS
600 V
600 V
R DS( on)
< 3.5 Ω
< 3.5 Ω
ID
2.9 A
2.2 A
s TYPICAL R_DS(on) = 3.2 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
V_{D S} Drain-source Voltage (V_GS = 0)
V_{DG R} Drain- gate Voltage (R_GS = 20 kΩ)
VGS Gate-source Voltage
I_D
Drain Current (continuous) at T _c = 25 ^oC
I_D
Drain Current (continuous) at T _c = 100 ^oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 ^oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
December 1996
Val ue
STP2N60
S T P2 N6 0F I
600
600
± 20
2.9
2.2
1.7
1.3
11
11
70
35
0. 56
0. 28

2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/^oC
V
o_C
o_C
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