STP2HNC60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 600V - 4ohm - 2.2A TO-220/TO-220FP PowerMesh™II MOSFET

STP2HNC60
STP2HNC60FP
N-CHANNEL 600V - 4Ω - 2.2A TO-220/TO-220FP
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP2HNC60
STP2HNC60FP
600 V
600 V
<5Ω
<5Ω
2.2 A
2.2 A
s TYPICAL R_DS(on) = 4 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
V_ISO
T_stg
T_j
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
.
May 2001
Value
Unit
STP2HNC60 STP2HNC60FP
600
V
600
V
± 30
V
2.2
2.2(*)
A
1.4
1.4(*)
A
8.8
8.8(*)
A
60
30
W
0.48
0.24
W/°C
3.5
V/ns
--
2000
V
–65 to 150
°C
150
°C
(1)ISD ≤ 2.2A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(*)_.Limited only by maximum temperature allowed
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