STP27N60M2-EP Datasheet, PDF (1/16 Pages) STMicroelectronics – Very low turn-off switching losses

STP27N60M2-EP,
STW27N60M2-EP
N-channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP
Power MOSFETs in TO-220 and TO-247 packages
Datasheet - production data
TAB
Features
Order code
V DS RDS(on) max
ID
STP27N60M2-EP 600 V
0.163 Ω
20 A
STW27N60M2-EP 600 V
0.163 Ω
20 A
3
2
1
TO-220
3
2
1
TO-247
 Extremely low gate charge
 Excellent output capacitance (COSS) profile
 Very low turn-off switching losses
 100% avalanche tested
 Zener-protected
Figure 1: Internal schematic diagram
Applications
 Switching applications
 Tailored for very high frequency converters
(f > 150 kHz)
Order code
STP27N60M2-EP
STW27N60M2-EP
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to their strip
layout and an improved vertical structure, these
devices exhibit low on-resistance, optimized
switching characteristics with very low turn-off
switching losses, rendering them suitable for the
most demanding very high frequency converters.
Table 1: Device summary
Marking
Package
Packaging
27N60M2EP
TO-220
TO-247
Tube
December 2015
DocID028723 Rev 1
This is information on a product in full production.
1/16
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