STP265N6F6AG Datasheet, PDF (1/13 Pages) STMicroelectronics – High avalanche ruggedness

STP265N6F6AG
Automotive-grade N-channel 60 V, 2.3 mΩ typ., 180 A
STripFET™ F6 Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STP265N6F6AG
VDS
60 V
RDS(on) max
2.85 mΩ
ID
180 A
 AEC-Q101 qualified
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
S(3)
Order code
STP265N6F6AG
AM01475v1_Tab
Table 1: Device summary
Marking
265N6F6
Package
TO-220
Packing
Tube
November 2016
DocID027281 Rev 3
This is information on a product in full production.
1/13
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