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STP240N10F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – Ultra low on-resistance | |||
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STP240N10F7
N-channel 100 V, 2.85 m⦠typ., 110 A STripFET⢠F7
Power MOSFET in a TO-220 package
Datasheet - production data
TAB
3
2
1
TO-220
Features
Order code
STP240N10F7
VDS RDS(on)max.
ID
100 V
3.2 mâ¦
110 A
⢠Ultra low on-resistance
⢠100% avalanche tested
Applications
⢠High current switching applications
Figure 1. Internal schematic diagram
'7$%
Description
This N-channel Power MOSFET utilizes the
STripFET⢠F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
*
6
$0Y
Order code
STP240N10F7
Table 1. Device summary
Marking
Package
240N10F7
TO-220
Packaging
Tube
July 2014
This is information on a product in full production.
DocID023934 Rev 3
1/13
www.st.com
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