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| STP22NS25Z Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY™ MOSFET | |||
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STP22NS25Z
STB22NS25Z
N-CHANNEL 250V - 0.13⦠- 22A TO-220/D2PAK
Zener-Protected MESH OVERLAY⢠MOSFET
TYPE
VDSS
RDS(on)
ID
STP22NS25Z
STB22NS25Z
250 V
250 V
< 0.15 â¦
< 0.15 â¦
22 A
22 A
s TYPICAL RDS(on) = 0.13 â¦
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAYâ¢
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Companyâs proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
3
2
1
TO-220
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
VDS
Drain-source Voltage (VGS = 0)
250
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
250
VGS
Gate- source Voltage
± 20
ID
Drain Current (continuos) at TC = 25°C
22
ID
Drain Current (continuos) at TC = 100°C
13.9
IDM (l) Drain Current (pulsed)
88
PTOT
Total Dissipation at TC = 25°C
135
Derating Factor
1.07
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5Kâ¦)
2500
dv/dt (1) Peak Diode Recovery voltage slope
5
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
â55 to 150
(â¢)Pulse width limited by safe operating area
(1) ISD â¤22A, di/dt â¤200A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX.
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
January 2002
1/10
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