STP22NM50 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh™Power MOSFET

STP22NM50 - STP22NM50FP
STB22NM50 - STB22NM50-1
N-CHANNEL 500V - 0.16Ω - 20A TO-220/FP/D²PAK/I²PAK
MDmesh™Power MOSFET
ADVANCED DATA
TYPE
V_DSS R_DS(on) R_ds(on)*Q_g I_D
STP22NM50
STP22NM50FP
STB22NM50
STB22NM50-1
500 V
500 V
500 V
500 V
<0.215Ω
<0.215Ω
<0.215Ω
<0.215Ω
6.4 Ω*nC
6.4 Ω*nC
6.4 Ω*nC
6.4 Ω*nC
20 A
20 A
20 A
20 A
s TYPICAL R_DS(on) = 0.16Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE CHARGE
s LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company’s propri-
etary strip technique yields overall dynamic perfor-
mance that is significantly better than that of similar
competition’s products.
TO-220
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
V_ISO
Insulation Winthstand Voltage (DC)
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
January 2003
Value
Unit
STP(B)22NM50(-1) STP22NM50FP
500
V
500
V
±30
V
20
20(*)
A
12.6
12.6(*)
A
80
80(*)
A
192
45
W
1.2
0.36
W/°C
15
V/ns
--
2000
V
–65 to 150
°C
150
°C
(1)ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*)Limited only by maximum temperature allowed
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