STP22NF03L Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 30V - 0.038ohm - 22A TO-220 STripFET™ POWER MOSFET

STP22NF03L
N-CHANNEL 30V - 0.038Ω - 22A TO-220
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP22NF03L
30V
<0.05Ω
22A
s TYPICAL R_DS(on) = 0.038Ω
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE AT 100°C
s APPLICATION ORIENTED CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of STMi-
croelectronics unique “Single Feature Size™” strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
E_AS (2) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Aug 2000
Value
30
30
±15
22
16
88
45
0.3
6
200
–65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
°C
(1) I_SD ≤10A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
(2) Starting Tj=25°C, ID=11A, VDD=15V
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