STP22NE10L Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 100V - 0.07 ohm - 22A TO-220 STripFET POWER MOSFET

®
STP22NE10L
N - CHANNEL 100V - 0.07 Ω - 22A TO-220
STripFET™ POWER MOSFET
TYPE
V _DSS
R_DS(on)
STP22NE10L
100 V < 0.085 Ω
s TYPICAL RDS(on) = 0.07 Ω
s LOW THRESHOLD DRIVE
s LOGIC LEVEL DEVICE
I_D
22 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
Va l u e
V_DS Drain-source Voltage (V_GS = 0)
100
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
100
VG S
I_D
I_D
I _DM ( •)
P_tot
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
± 20
22
14
88
90
Derating Factor
0.6
EAS (1) Single Pulse Avalanche Energy
250
T_stg Storage Temperature
-65 to 175
T_j Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area
( 1) starting Tj = 25 ^oC, ID =22A , VDD = 50V
November 1999
Unit
V
V
V
A
A
A
W
W /^o C
mJ
o_C
o_C
1/8