STP22NE03L Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

STP22NE03L
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZE™ " POWER MOSFET
TYPE
VDSS
RDS(on)
STP22NE03L
30 V < 0.05 Ω
s TYPICAL RDS(on) = 0.034 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 ^oC
s APPLICATION ORIENTED
CHARACTERIZATION
ID
22 A
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size™ "
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
IDM(•)
Ptot
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
January 1998
Value
Unit
30
V
30
V
± 15
V
22
A
16
A
88
A
60
W
0.4
W/^oC
6
-65 to 175
175
(1) ISD ≤22 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
1/5