STP21NM60N_08 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh™ Power MOSFET

STP21NM60N-F21NM60N-STW21NM60N
STB21NM60N-STB21NM60N-1
N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D²PAK -
I²PAK - TO-247 second generation MDmesh™ Power MOSFET
Features
Type
V_DSS
(@Tjmax)
R_DS(on)
max
I_D
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
650 V
650 V
650 V
650 V
650 V
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
17 A
17 A
17 A⁽¹⁾
17 A
17 A
1. Limited by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
B21NM60N
B21NM60N
F21NM60N
P21NM60N
W21NM60N
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
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February 2008
Rev 7
1/18
www.st.com
18