STP21NM60N Datasheet, PDF (1/16 Pages) STMicroelectronics – N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET

STP21NM60N-STF21NM60N-STW21NM60N
STB21NM60N - STB21NM60N-1
N-CHANNEL 600V - 0.19 Ω - 17 A TO-220/FP/D²/I²PAK/TO-247
SECOND GENERATION MDmesh™ MOSFET
Table 1: General Features
TYPE
V_DSS
R_DS(on)
I_D
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
660 V
660 V
660 V
660 V
660 V
< 0.24 Ω
< 0.24 Ω
< 0.24 Ω
< 0.24 Ω
< 0.24 Ω
17 A
17 A
17 A (*)
17 A
17 A
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ LOW GATE INPUT RESISTANCE
DESCRIPTION
The STx21NM60N is realized with the second
generation of MDmesh Technology. This revolu-
tionary MOSFET associates a new vertical struc-
ture to the Company's strip layout to yield one of
the world's lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high
efficiency converters
Figure 1: Package
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D^²PAK
123
I^²PAK
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh™ II family is very suitable for in-
creasing power density of high voltage converters
allowing system miniaturization and higher effi-
ciencies.
Table 2: Order Codes
SALES TYPE
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
MARKING
B21NM60N
B21NM60N
F21NM60N
P21NM60N
W21NM60N
October 2005
PACKAGE
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
PACKAGING
TAPE & REEL
TUBE
TUBE
TUBE
TUBE
Rev.3
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