STP21NM50N_07 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh™ Power MOSFET

STP/F21NM50N - STW21NM50N
STB21NM50N - STB21NM50N-1
N-channel 500V - 0.15Ω - 18A TO-220/FP/D²/I²PAK/TO-247
Second generation MDmesh™ Power MOSFET
General features
Type
V_DSS
(@Tjmax)
R_DS(on)
I_D
STB21NM50N
STB21NM50N-1
STF21NM50N
STP21NM50N
STW21NM50N
550V
550V
550V
550V
550V
< 0.19Ω
< 0.19Ω
< 0.19Ω
< 0.19Ω
< 0.19Ω
18A
18A
18A⁽¹⁾
18A
18A
1. Limited by wire bonding
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Description
The devices are realized with the second
generation of MDmesh Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
TO-247
Internal schematic diagram
Order codes
Part number
STB21NM50N
STB21NM50N-1
STF21NM50N
STP21NM50N
STW21NM50N
January 2007
Marking
B21NM50N
B21NM50N
F21NM50N
P21NM50N
W21NM50N
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Rev 6
Packaging
Tape & reel
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