STP210NF02 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-CHANNEL 20V - 0.0026 ohm - 120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET

STP210NF02
STB210NF02 STB210NF02-1
N-CHANNEL 20V - 0.0026 Ω - 120A D^²PAK/I^²PAK/TO-220
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE
V_DSS
R_DS(on)
STB210NF02/-1
STP210NF02
20 V
20 V
<0.0032 Ω
<0.0032 Ω
s TYPICAL R_DS(on) = 0.0026Ω
s STANDARD THRESHOLD DRIVE
s 100% AVALANCHE TESTED
I_D
120 A(**)
120 A(**)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
3
1
D^²PAK
TO-263
123
I^²PAK
TO-262
3
2
1
TO-220
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB210NF02
STB210NF02T4
STP210NF02
STB210NF02-1
MARKING
B210NF02
B210NF02
P210NF02
B210NF02
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(**)
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•)
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
October 2002
.
PACKAGE
D²PAK
D²PAK
TO-220
I²PAK
PACKAGING
TUBE
TAPE & REEL
TUBE
TUBE
Value
20
20
± 20
120
120
480
300
2.0
1
2.3
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
-55 to 175
°C
(1) I_SD ≤120A, di/dt ≤250A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2) Starting T_j = 25 ^oC, I_D = 60 A, V_DD = 14 V
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