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STP20NF06 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 60V - 0.06ohm - 20A TO-220/TO-220FP STripFET II POWER MOSFET | |||
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STP20NF06
STF20NF06
N-CHANNEL 60V - 0.06 ⦠- 20A TO-220/TO-220FP
STripFET⢠II POWER MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STP20NF06
STF20NF06
60 V
60 V
< 0.07 â¦
< 0.07 â¦
20 A
20 A(*)
â TYPICAL RDS(on) = 0.06 â¦
â AVALANCHE RUGGED TECHNOLOGY
â 100% AVALANCHE TESTED
â 175oC OPERATING TEMPERATURE
â HIGH dv/dt CAPABILITY
â APPLICATION ORIENTED
CHARACTERIZATION
Figure 1:Package
3
2
1
TO-220
3
2
1
TO-220FP
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Sizeâ¢"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
Figure 2: Internal Schematic Diagram
APPLICATIONS
â DC MOTOR CONTROL
â DC-DC & DC-AC CONVERTERS
Table 2: Order Codes
Part Number
STP20NF06
STF20NF06
MARKING
P20NF06
F20NF06
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(â¢) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(â¢) Pulse width limited by safe operating area.
(*)Refer to soa for the max allowable current value on FP-type due
to Rth value
December 2004
STP20NF06
20
14
80
60
0.4
Value
60
60
± 20
9
120
STF20NF06
20(*)
14(*)
80(*)
28
0.18
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD â¤20A, di/dt â¤200A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
(2) Starting Tj = 25 oC, ID = 10A, VDD= 30V
Rev. 1
1/10
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