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STP20NE10 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 100V - 0.07ohm - 20A - TO-220 STripFET MOSFET | |||
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STP20NE10
N - CHANNEL 100V - 0.07⦠- 20A - TO-220
STripFET⢠MOSFET
TYPE
VDSS
RDS(on)
ST P20NE10
100 V < 0.1 â¦
s TYPICAL RDS(on) = 0.07 â¦
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
ID
20 A
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique âSingle Feature Size⢠â
strip-based process.The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kâ¦)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM ( â¢)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area
July 1998
Value
Uni t
100
V
100
V
± 20
V
20
A
14
A
80
A
90
W
0.6
W/oC
7
V/ ns
-65 to 175
oC
175
oC
(1) ISD ⤠20 A, di/dt ⤠300 A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
1/8
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