STP20NE06L Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET

STP20NE06L
®
STP20NE06LFP
N - CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
STP20NE06L
S TP20N E06LF P
V_DSS
60 V
60 V
R_{DS( on )}
< 0.07 Ω
< 0.07 Ω
s TYPICAL RDS(on) = 0.06 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 ^oC
s APPLICATION ORIENTED
CHARACTERIZATION
I_D
20 A
13 A
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ” Single Feature
Size™ ” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_DS
V _DGR
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
V_GS
I_D
I_D
I_DM(•)
P_tot
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
V _ISO
dv/dt
Insulation W ithstand Voltage (DC)
Peak Diode Recovery voltage slope
T_{s tg} Storage T emperature
T_j
Max. O perating Junct ion T emperature
(•) Pulse width limited by safe operating area
April 1999
Value
Unit
STP20NE06 ST P20NE06F P
60
V
60
V
± 20
V
20
13
A
14
9
A
80
80
A
70
0.47
30
W
0.2
W /^o C

20 00
V
7
V/ns
-65 to 175
o_C
175
o_C
( 1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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