STP20NE06 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET

STP20NE06
®
STP20NE06FP
N - CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
V _DSS
R_DS(on)
STP20NE06
STP20NE06FP
60 V
60 V
< 0.080 Ω
< 0.080 Ω
s TYPICAL RDS(on) = 0.06 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 ^oC
s APPLICATION ORIENTED
CHARACTERIZATION
I_D
20 A
13 A
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ” Single Feature
Size™ ” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V _DS
V _DGR
V_GS
I_D
I_D
I_DM (•)
P_tot
Drain-source Volt age (V_GS = 0)
Drain- gat e Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Tot al Dissipation at T_c = 25 ^oC
Derating Factor
V_ISO Insulation Withstand Voltage (DC)
dv/dt Peak Diode Recovery voltage slope
Ts tg Storage Temperature
T_j Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1999
Va l u e
Un it
STP20NE06 STP20NE06FP
60
V
60
V
± 20
V
20
13
A
14
9
A
80
80
A
70
0.47
30
W
0.2
W /^o C

2000
V
7
-65 to 175
175
( 1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
1/9