STP20N90K5 Datasheet, PDF (1/13 Pages) STMicroelectronics – Ultra-low gate charge

STP20N90K5
N-channel 900 V, 0.21 Ω typ., 20 A MDmesh™ K5
Power MOSFET in a TO-220 package
Datasheet - production data
TAB
TO-220
1 ²³
Figure 1: Internal schematic diagram
Features
Order code
STP20N90K5
VDS
900 V
RDS(on) max.
0.25 Ω
ID
20 A
 Industry’s lowest RDS(on) x area
 Industry’s best FoM (figure of merit)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STP20N90K5
Table 1: Device summary
Marking
Package
20N90K5
TO-220
Packing
Tube
January 2017
DocID029148 Rev 3
This is information on a product in full production.
1/13
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