STP1N120 Datasheet, PDF (1/10 Pages) STMicroelectronics – channel 1200V - 30Ω - 500mA - TO-220 Zener - protected SuperMESH™ Power MOSFET

STP1N120
N-channel 1200V - 30Ω - 500mA - TO-220
Zener - protected SuperMESH™ Power MOSFET
PRELIMINARY DATA
General features
Type
STP1N120
V_DSS
1200V
R_DS(on)
I_D
< 38Ω 500mA
P_W
45W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ ESD improved capability
■ New high voltage benchmark
■ Gate charge minimized
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STP1N120
Marking
P1N120
Package
TO-220
Packaging
Tube
September 2006
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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