STP19NB20 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH™ MOSFET

STP19NB20 - STP19NB20FP
STB19NB20-1
N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I²PAK
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP19NB20
STP19NB20FP
STB19NB20-1
200 V
200 V
200 V
< 0.18 Ω
< 0.18 Ω
< 0.18 Ω
19 A
10 A
19 A
s TYPICAL R_DS(on) = 0.15 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL AND CONSUMER
ENVIRONMENT
TO-220
3
2
1
TO-220FP
I²PAK^{1 2 3}
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
I_DM (l)
Drain Current (continuous) at T_C = 100°C
Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
V_ISO
Insulation Withstand Voltage (DC)
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
August 2002
Value
Unit
STP(B)19NB20(-1) STP19NB20FP
200
V
200
V
± 30
V
19
10
A
12
6.0
A
76
76
A
125
35
W
1
0.28
W/°C
5.5
V/ns
-
2500
V
–65 to 150
°C
150
(1)I_SD ≤19 A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
°C
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