STP19N06L Datasheet, PDF (1/7 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

STP19N06L
STP19N06LFI
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE
STP19N06L
STP19N06LFI
VDSS
60 V
60 V
RDS(on)
< 0.1 Ω
< 0.1 Ω
ID
19 A
13 A
s TYPICAL RDS(on) = 0.085 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW GATE CHARGE
s LOGIC LEVEL COMPATIBLE INPUT
s 175 ^oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID
Drain Current (continuous) at Tc = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 ^oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
February 1995
Value
STP19N06L
STP19N06LFI
60
60
± 15
19
13
13
9
76
76
80
35
0.53
0.23

2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/^oC
V
o_C
o_C
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