STP190N55LF3 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 55 V, 2.9 miliohm, 120 A, TO-220

STP190N55LF3
N-channel 55 V, 2.9 mΩ, 120 A, TO-220
STripFET™ Power MOSFET
Features
Type
STP190N55LF3
V_DSS
55 V
R_DS(on)
max
I_D
P_D
< 3.7 mΩ 120 A 312 W
■ Logic level drive
■ 100% avalanche tested
Application
■ Switching applications
– Automotive
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics' unique “single feature size”
strip-based process, which has decreased the
critical alignment steps, offering remarkable
manufacturing reproducibility. The outcome is a
transistor with extremely high packing density for
low on resistance, rugged avalanche
characteristics and low gate charge.
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STP190N55LF3
190N55LF3
Package
TO-220
Packaging
Tube
November 2008
Rev 1
1/12
www.st.com
12