STP18N60DM2 Datasheet, PDF (1/13 Pages) STMicroelectronics – Extremely high dv/dt ruggedness

STP18N60DM2
N-channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STP18N60DM2
VDS
600 V
RDS(on) max.
0.295 Ω
ID
12 A
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
S(3)
Order code
STP18N60DM2
AM15572v1_tab
Table 1: Device summary
Marking
18N60DM2
Package
TO-220
Packing
Tube
January 2016
DocID027674 Rev 3
This is information on a product in full production.
1/13
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