|
STP16NS25 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET | |||
|
STP16NS25
STP16NS25FP
N-CHANNEL 250V - 0.23⦠- 16A TO-220 / TO-220FP
MESH OVERLAY⢠MOSFET
TYPE
VDSS
RDS(on)
ID
STP16NS25
STP16NS25FP
250 V
250 V
< 0.28 â¦
< 0.28 â¦
16 A
16 A
s TYPICAL RDS(on) = 0.23 â¦
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAYâ¢
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Companyâs proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
s IDEAL FOR MONITORâs B+ FUNCTION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢)Pulse width limited by safe operating area
May 2002
Value
STP16NS25
STP16NS25FP
250
250
± 20
16
16(*)
11
11(*)
64
64(*)
140
40
1
0.33
5
-
2500
â65 to 150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
(1) ISD⤠16A, di/dtâ¤300 A/µs, VDD⤠V(BR)DSS, Tjâ¤TjMAX
(*) Limited only by maximum temperature allowed
1/9
|
▷ |