STP16NK60Z_05 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 600V - 0.38 - 14 A TO-220 /I2SPAK/TO-247 Zener - Protecdet SuperMESH™ MOSFET

STP16NK60Z - STB16NK60Z-S
STW16NK60Z
N-CHANNEL 600V - 0.38 Ω - 14 A TO-220 /I2SPAK/TO-247
Zener - Protecdet SuperMESH™ MOSFET
TARGET SPECIFICATION
Table 1: General Features
TYPE
V_DSS
R_DS(on)
I_D
Pw
STP16NK60Z
STB16NK60Z-S
STW16NK60Z
600 V
600 V
600 V
< 0.42 Ω 14 A 190 W
< 0.42 Ω 14 A 190 W
< 0.42 Ω 14 A 190 W
■ TYPICAL R_DS(on) = 0.38 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
Figure 1: Package
3
2
1
TO-220
123
I²SPAK
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES
Table 2: Order Codes
SALES TYPE
STP16NK60Z
STB16NK60Z-S
STW16NK60Z
MARKING
P16NK60Z
B16NK60Z
W16NK60Z
PACKAGE
TO-220
I²SPAK
TO-247
PACKAGING
TUBE
TUBE
TUBE
Rev. 1
September 2005
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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