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STP16NF06 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 60V - 0.08 ohm - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET | |||
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STP16NF06
STP16NF06FP
N-CHANNEL 60V - 0.08 ⦠- 16A TO-220/TO-220FP
STripFET⢠II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP16NF06
STP60NF06FP
60 V
60 V
<0.1 â¦
<0.1 â¦
16 A
11 A
s TYPICAL RDS(on) = 0.08â¦
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE AT 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Sizeâ¢"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s HIGH CURRENT, HIGH SWITCHING SPEED
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(â¢) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(â¢) Pulse width limited by safe operating area.
(*) Current Limited by packageâs thermal resistance
April 2002
.
STP16NF06
16
11
64
45
0.3
--------
Value
STP16NF06FP
60
60
± 20
11(*)
7.5(*)
44(*)
25
0.17
20
130
2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
-55 to 175
°C
(1) ISD ⤠16A, di/dt ⤠200A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX.
(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V
1/9
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