STP16NE06L Datasheet, PDF (1/7 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET

STP16NE06L
STP16NE06L/FP
N - CHANNEL ENHANCEMENT MODE
SINGLE FEATURE SIZE™ POWER MOSFET
T Y PE
ST P16NE06L
ST P16NE06LFP
VDSS
60 V
60 V
RDS(on)
< 0.12 Ω
< 0.12 Ω
ID
16 A
11 A
TARGET DATA
s TYPICAL RDS(on) = 0.09 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s 175^oC OPERATING TEMPERATURE
s HIGH dV/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
3
2
1
3
2
1
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
VDS Drain-source Volt age (VGS = 0)
VDGR Drain- gate Volt age (RGS = 20 kΩ)
VGS Gate-source Voltage
ID
Drain Current (continuous) at Tc = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 ^oC
Derating Factor
VISO Insulation W ithst and Voltage (DC)
dV/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
T_j
Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
Value
Un it
STP16NE06L STP16NE06LFP
60
V
60
V
± 15
V
16
11
A
10
7
A
64
64
A
60
30
W
0.4
0.2
W /^o C

2000
V
6
-65 to 175
175
(1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
October 1997
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