STP16NE06 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET

STP16NE06
®
STP16NE06FP
N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
STP16NE06
STP16NE06FP
VDSS
60 V
60 V
RDS(on)
< 0.100 Ω
< 0.100 Ω
ID
16 A
11 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.08 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s 175^oC OPERATING TEMPERATURE
s HIGH dV/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
3
2
1
3
2
1
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 ^oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
dV/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
’ New RDS (on) spec. starting from JULY 98
June 1998
Value
Unit
STP16NE06 STP16NE06FP
60
V
60
V
± 20
V
16
11
A
10
7
A
64
64
A
60
30
W
0.4
0.2
W/^oC

2000
V
6
-65 to 175
175
(1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
1/9