STP16NB25 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 250V - 0.220ohm - 16A - TO-220/TO-220FP PowerMESH MOSFET

STP16NB25
®
STP16NB25FP
N - CHANNEL 250V - 0.220Ω - 16A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
ST P16NB 25
ST P16NB 25FP
250 V
250 V
< 0.28 Ω
< 0.28 Ω
16 A
8A
s TYPICAL RDS(on) = 0.220 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V _DS
V _DGR
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
VGS G ate-source Volt age
ID
Drain Current (continuous) at Tc = 25 ^oC
I_D
Drain Current (continuous) at T_c = 100 ^oC
I_DM (•) Drain Current (pulsed)
P_tot T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
V_ISO I nsulation W ithstand Voltage (DC)
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1999
Va l u e
STP16NB25 ST P16NB25F P
250
250
± 30
16
8
10
5
64
32
140
45
1.12
0.36
5.5
5.5
-----
2000
-65 to 150
150
( 1) ISD ≤ 16A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it
V
V
V
A
A
A
W
W /^o C
V/ns
V
o_C
o_C
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